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Datasheet 13N50C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
113N50CFQB13N50C

FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail
Fairchild Semiconductor
Fairchild Semiconductor
data
213N50CFFQPF13N50CF

FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Rec
Fairchild Semiconductor
Fairchild Semiconductor
data


13N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
113N03LAIPD13N03LA

IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Infineon Technologies
Infineon Technologies
data
213N06LFQB13N06L

FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor
Fairchild Semiconductor
Fairchild Semiconductor
data
313N10FQB13N10

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
Fairchild Semiconductor
Fairchild Semiconductor
data
413N40N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N40 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
mosfet
513N40N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-st
Unisonic Technologies
Unisonic Technologies
mosfet
613N40K-MTN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in a
Unisonic Technologies
Unisonic Technologies
mosfet
713N50N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching
Unisonic Technologies
Unisonic Technologies
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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