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Datasheet 13N06L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 13N06L | FQB13N06L FQB13N06L , FQI13N06L
May 2001
QFET
FQB13N06L , FQI13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ene
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Fairchild Semiconductor |
13N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 13N03LA | IPD13N03LA
IPD13N03LA IPU13N03LA
OptiMOS®2 Power-Transistor
Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 �
| Infineon Technologies |
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2 | 13N06L | FQB13N06L
FQB13N06L , FQI13N06L
May 2001
QFET
FQB13N06L , FQI13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail
| Fairchild Semiconductor |
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3 | 13N10 | FQB13N10
FQB13N10 , FQI13N10
January 2001
QFET
FQB13N10 , FQI13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
| Fairchild Semiconductor |
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4 | 13N40 | N-Channel Mosfet Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
13N40
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.35Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
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| Inchange Semiconductor |
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5 | 13N40 | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
13N40
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-stat
| Unisonic Technologies |
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6 | 13N40K-MT | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
13N40K-MT
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allo
| Unisonic Technologies |
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7 | 13N50 | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 13N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
1
TO-220
The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching sp
| Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
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