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Datasheet 13N06L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Comprar ahora
113N06L FQB13N06L

FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ene
Fairchild Semiconductor
Fairchild Semiconductor
buy 13N06L


13N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 13N03LA IPD13N03LA

IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 �
Infineon Technologies
Infineon Technologies
datasheet 13N03LA pdf
2 13N06L FQB13N06L

FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail
Fairchild Semiconductor
Fairchild Semiconductor
datasheet 13N06L pdf
3 13N10 FQB13N10

FQB13N10 , FQI13N10 January 2001 QFET FQB13N10 , FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
Fairchild Semiconductor
Fairchild Semiconductor
datasheet 13N10 pdf
4 13N40 N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N40 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
datasheet 13N40 pdf
5 13N40 N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-stat
Unisonic Technologies
Unisonic Technologies
datasheet 13N40 pdf
6 13N40K-MT N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allo
Unisonic Technologies
Unisonic Technologies
datasheet 13N40K-MT pdf
7 13N50 N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching sp
Unisonic Technologies
Unisonic Technologies
datasheet 13N50 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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