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Datasheet 10N65 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
13 | 10N65 | N-CHANNEL MOSFET 10N65(F,B,H)
10A mps,650 Volts N-CHANNEL MOSFET
FEATURE
10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 10N65
ITO-220AB 10N65F
TO-263 10N65B
TO-262 10N65H
Absolute Maximum Ratings(TC=2 |
CHONGQING PINGYANG |
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12 | 10N65 | N-CHANNEL MOSFET 10N65
N 沟道增强型场效应晶体管 N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Electronic |
LONG-SEMI |
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11 | 10N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
10N65
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characterist |
Unisonic Technologies |
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10 | 10N65-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
10N65-C
Preliminary
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av |
Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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