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Datasheet 10JDA40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | 10JDA40 | Standard Recovery Diode 1A Avg. 400 Volts Standard Recovery Diode 10JDA40
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10JDA40
Tj=25˚∞CC Tj=150˚∞CC
0.4 0.8 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.6
AVERAGE FORWARD POWER DISSIPATION (W)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
0 0
AVERAGE FORWARD POWER DISSIPATION
10JDA40 D.C.
HALF SINE WAVE
0.4 0.8 1.2 AVERAGE FORWARD CUR
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 Nihon Inter Electronics |
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| 2 | 10JDA40 | AXIAL LEADED SILICON RECTIFIER DIODES 10JDA40
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 400V CURRENT: 1.0 A
Features
! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability
Mechanical Data
! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number
Maximum
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 SUNMATE |
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10J Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | 10J303 | GT10J303
GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
- Third-generation IGBT - Enhancement mode type - High speed - Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10
|  Toshiba |
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| 2 | 10J4B41 | Diode, Rectifier
|  American Micro semiconductor |
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| 3 | 10J4B41 | RECTIFIER STACK
|  Toshiba Semiconductor |
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| 4 | 10JDA10 | AXIAL LEADED SILICON RECTIFIER DIODES
10JDA10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100V CURRENT: 1.0 A
Features
! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability
Mechanical Data
! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity:
| SUNMATE |
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| 5 | 10JDA10 | Standard Recovery Diode
1A Avg. 100 Volts Standard Recovery Diode 10JDA10
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10JDA10
Tj=25˚∞CC Tj=150˚∞CC
0.4 0.8 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.6
AVERAGE FORWARD POWER DISSIPATION (W)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
0
| Nihon Inter Electronics |
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| 6 | 10JDA20 | Standard Recovery Diode
1A Avg. 200 Volts Standard Recovery Diode 10JDA20
INSTANTANEOUS FORWARD CURRENT (A)
10 5
2 1 0.5
0.2 0.1
0
FORWARD CURRENT VS. VOLTAGE
10JDA20
Tj=25˚∞CC Tj=150˚∞CC
0.4 0.8 1.2 INSTANTANEOUS FORWARD VOLTAGE (V)
1.6
AVERAGE FORWARD POWER DISSIPATION (W)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
0
| Nihon Inter Electronics |
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| 7 | 10JDA40 | AXIAL LEADED SILICON RECTIFIER DIODES
10JDA40
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 400V CURRENT: 1.0 A
Features
! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability
Mechanical Data
! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity:
| SUNMATE |
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