Datasheet 10EDB60 Equivalent ( PDF )

DIODE FEATURES Type : 10EDB60 1A 600V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage

10EDB60 GLASS PASSIVATED RECTIFIER VOLTAGE: 600V CURRENT: 1.0A FEATURE Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C , 10sec, 0.375" lead length at 5 lbs tension Glass Passivated chip R-1 MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with

10EDB60 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 600V CURRENT: 1.0 A Features ! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability Mechanical Data ! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ABA D

DIODE Type : 10E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.33g Rating Symbol 10E1 Unit Repetitive Peak Reverse Voltage Non-repeti

DIODE Type : 10E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.33g Rating Symbol 10E2 Unit Repetitive Peak Reverse Voltage Non-repeti

DIODE Type : 10E4 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.33g Rating Symbol 10E4 Unit Repetitive Peak Reverse Voltage Non-repeti

10EDA10 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 100V CURRENT: 1.0 A Features ! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability Mechanical Data ! Case: D O - 4 1 Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 2

1A Avg. 100 Volts Standard Recovery Diode 10EDA10 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 1 0.5 0.2 0.1 0 FORWARD CURRENT VS. VOLTAGE 10EDA10 Tj=25∞˚CC Tj=150∞˚CC 0.4 0.8 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 1.6 AVERAGE FORWARD POWER DISSIPATION (W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

1A Avg. 200 Volts Standard Recovery Diode 10EDA20 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 1 0.5 0.2 0.1 0 FORWARD CURRENT VS. VOLTAGE Tj=25˚∞CC Tj=150˚∞CC 0.4 0.8 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 1.6 AVERAGE FORWARD POWER DISSIPATION (W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 AVERAG

DIODE Type : 10EDA40 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 10EDA40 Repetitive Pe