Datasheet 06N80C3 Equivalent ( PDF ) - Data

SPP06N80C3 CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.9 31 V Ω nC PG-TO220-3 CoolMOSTM 800V des

FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handin

PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=6mΩ RDS(ON), [email protected],IDS@30A=9mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC, DC Converters and Motor Drivers Fully Characterized

1. Ideal for high-frequency dc, dc converters 2. Excellent gate charge x R DS(on) product (FOM) 3. Very low on-resistance R DS(on) 4. Superior thermal resistance 5. P-TO263-3-2

SPP06N80C3 CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Produ