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TCSCS0J156XBAR Buy Now and Stock Informations |
TCSCS0J156XBAR Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TCSCS0J156xBAR | Manganese Dioxide Type Samsung data | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TCSCS0Gxxxx | SCN Series / Soild Tantalum Chip Capacitors Samsung Electronics capacitor | | |
2 | TCSCS0Jxxxx | SCN Series / Soild Tantalum Chip Capacitors Samsung Electronics capacitor | | |
3 | TCSCS1Cxxxx | SCN Series / Soild Tantalum Chip Capacitors Samsung Electronics capacitor | | |
4 | TCSCS1Dxxxx | SCN Series / Soild Tantalum Chip Capacitors Samsung Electronics capacitor | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TCSCS0J156xBAR | Manganese Dioxide Type Manganese Dioxide Type
Feature
EMC Lead Frame
Tantalum wire Tantalum Power Positive
Ta2O5 Dielectric
C / Ag MnO2 Negative
Configuration And Dimension
Normal type
L
W1
Z
Z
Face - down type
L Samsung data | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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