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STGP6M65DF2 Buy Now and Stock Informations |
STGP6M65DF2 Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STGP6M65DF2 | Trench gate field-stop IGBT STMicroelectronics igbt | |
PDF STGP6M65DF2 Data sheet ( Hoja de datos )
Electronic components |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STGP6M65DF2 | Trench gate field-stop IGBT STGP6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sa STMicroelectronics igbt | |
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| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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