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SF_2N5599 Buy Now and Stock Informations |
SF_2N5599 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SF_2N5599 | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package Seme LAB data | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SF_2N2219 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package Seme LAB data | | |
2 | SF_2N2222AXCSM | Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Seme LAB data | | |
3 | SF_2N2432 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package Seme LAB data | | |
4 | SF_2N2845 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package Seme LAB data | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SF_2N5599 | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package 2N5599
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.7 Seme LAB data | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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