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MSG36E41 Buy Now and Stock Informations |
MSG36E41 Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MSG36E41 | SiGe HBT type Panasonic Semiconductor data | | |
| 2 | MSG36E41 | SiGe HBT type Panasonic Semiconductor data | |
PDF MSG36E41 Data sheet ( Hoja de datos )
Electronic components |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MSG36E41 | SiGe HBT type Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elem Panasonic Semiconductor data | | |
| 2 | MSG36E41 | SiGe HBT type Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elem Panasonic Semiconductor data | |
| Esta es una página para buscar información de compra e inventario para MSG36E41. Para productos compatibles y de reemplazo con MSG36E41, descargue la hoja de datos para obtener más detalles. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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