K4H1G0438C-TCA0 Buy Now and Stock Informations

K4H1G0438C-TCA0 Electronic Components

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4H1G0438C-TCA0	128Mb DDR SDRAM	Samsung	data

PDF K4H1G0438C-TCA0 Data sheet ( Hoja de datos )

Electronic components

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4H1G0438A-TCB0	128Mb DDR SDRAM	Samsung	data
2	K4H1G0438A-TLA0	128Mb DDR SDRAM	Samsung	data
3	K4H1G0438A-TLA2	128Mb DDR SDRAM	Samsung	data
4	K4H1G0438A-TLB0	128Mb DDR SDRAM	Samsung	data

Featured electronic components

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4H1G0438C-TCA0	128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 19	Samsung	data
2	K4H1G0438C-TCA2	128Mb DDR SDRAM 128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 19	Samsung	data

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
2SC1815	NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request	Semtech	PDF

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