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IRGIB7B60KDPBF Buy Now and Stock Informations |
IRGIB7B60KDPBF Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRGIB7B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR International Rectifier transistor | |
PDF IRGIB7B60KDPBF Data sheet ( Hoja de datos )
Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRGIB6B60KD | INSULATED GATE BIPOLAR TRANSISTOR International Rectifier transistor | | |
| 2 | IRGIB6B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR International Rectifier transistor | | |
| 3 | IRGIB7B60KD | INSULATED GATE BIPOLAR TRANSISTOR International Rectifier transistor | | |
| 4 | IRGIB7B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR International Rectifier transistor | |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRGIB7B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10 International Rectifier transistor | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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