TSM6866D PDF File ( Datasheet )

TSM6866D Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain 20V Dual N-Channel MOSFET w, ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Informatio