|
| TSM2312 Description |
| 20V N-Channel Enhancement Mode MOSFET
TSM2312
20V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS VGS = 4.5V
RDS(on) (max) VGS = 2.5V VGS = 1.8V
Qg
20 33 40 51 11
Unit V
mΩ
nC
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2312CX RF
SOT-23
3kpcs , 7” Reel
TSM2312CX RFG SOT-23
3kpcs , 7” Reel
Note: �
Taiwan Semiconductor Company |
| Related Part Number |
TSM210N02CX | TSM085N03PQ33 TSM103AIDT | TSM1C103F34D3R TSM2308 | TSM180N03PQ33 |
| DataSheet.es | 2020 | Contacto |