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TSHG5510 PDF File ( Datasheet )

Vishay
TSHG5510
VISHAY TSHG5510 Infrared Emitter, High Speed, 38 , T-1 3/4 (5mm), 100 mA, 1.45 V, 15 ns, 15 ns

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TSHG5510 Description
High Speed Infrared Emitting Diode

TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): 5 Leads with stand-off Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MH- Good spectral matching to Si photodetectors Compliant to RoHS direc
Vishay Siliconix
Vishay Siliconix



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