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TSA10N80M PDF File ( Datasheet )

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TSA10N80M-VB
TO247, N, VDS=800V, Id =11A, RDS(ON)=500M¦¸@VGS=10V, VGS=¡À30V, VTH=3.5V
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TSA10N80M Description
N-Channel MOSFET

TSA10N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 10.0A,

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Truesemi




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