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TPH8R80ANH PDF File ( Datasheet )

Toshiba
TPH8R80ANH,L1Q(M
Mosfet, N-Ch, 100V, 59A, Sop Rohs Compliant: Yes |Toshiba TPH8R80ANH, L1Q(M
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TPH8R80ANH Description
Field Effect Transistor

TPH8R80ANH MOSFETs Silicon N-channel MOS (U-MOS -H) TPH8R80ANH 1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4

Toshiba
Toshiba




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