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| TPH8R80ANH Description |
| Field Effect Transistor
TPH8R80ANH
MOSFETs Silicon N-channel MOS (U-MOS -H)
TPH8R80ANH
1. Applications
DC-DC Converters Switching Voltage Regulators Motor Drivers
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4
Toshiba |
| Related Part Number |
TPH14006NH | TPH2R608NH TPH5900CNH | TPH11006NL TPH1R403NL | TPH4R008NH |
| DataSheet.es | 2020 | Contacto |