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TPCS8102 PDF File ( Datasheet )

Toshiba
TPCS8102(TE12L)
Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

PDF Datasheet
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TPCS8102 Description
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~ 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics D
Toshiba Semiconductor
Toshiba Semiconductor



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