TPCP8901 PDF File ( Datasheet )

TPCP8901 TOSHIBA Transistor Silicon NPN , PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Switching Applications Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = 0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) : NPN High-speed switching : PNP : NPN VCE (sat) = 0.17 V (max) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 Low collector-emitter saturation : PNP VCE (sat) = 0.20 V (max) tf = 70 ns (typ.) tf = 85 ns