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TPCA8109 PDF File ( Datasheet )

Toshiba
TPCA8109
Power Field-Effect Transistor, 24A I(D), 30V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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TPCA8109 Description
Silicon P Channel MOS Type

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications 8 Unit: mm 1.27 0.4 ± 0.1 5 0.05 M A Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 0.5mA) 6.0 ± 0.3 5.0 ± 0.2 Small footprint due to small and thin package 0.15 ± 0.05 1 0.95 ± 0.05 4 0.595 0.1

Toshiba Semiconductor
Toshiba Semiconductor




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