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TPC8229-H PDF File ( Datasheet )

VBsemi
TPC8229-H-VB
N¡ªchannel, 80V, 3.5A, Rds(on), 75M¦¸@10V, 85M¦¸@4.5V, 20VGS(¡ÀV), 3.5VTH(V) , SOP8
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TPC8229-H Description
MOSFET, Transistor

TPC8229-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8229-H 1. Applications DC-DC Converters CCFL Inverters 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2

Toshiba
Toshiba




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