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TPC8106-H PDF File ( Datasheet )

Toshiba
TPC8106-H
TRANSISTOR 10 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-6J1B, 8 PIN, FET General Purpose Power

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TPC8106-H Description
SILICON P CHANNEL MOS TYPE

TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U MOSII) TPC8106 H High Speed and High Efficiency DC DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Low drain source ON resistance : Qg = 52 nC (typ.) : RDS (ON) = 14 mΩ (typ.) Unit: mm High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS =

Toshiba Semiconductor
Toshiba Semiconductor



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