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TPC8001 PDF File ( Datasheet )

Toshiba
TPC8001
Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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TPC8001 Description
Silicon N Channel MOS Type (MOSVI)

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSVI) TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 15 mΩ (typ.) : |Yfs| = 11 S (typ.) Unit: mm : IDSS = 10 A (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteri
Toshiba Semiconductor
Toshiba Semiconductor



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