TPC6130 PDF File ( Datasheet )

TPC6130 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC6130 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4. Absolute Maximum