TPC6108 PDF File ( Datasheet )

TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC6108 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) TENTATIVE Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-