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| TIP126 Description |
| Darlington PNP Power Transistors
Darlington Power Transistors (PNP) TIP125, 126, 127
Darlington Power Transistors (PNP)
Features
Designed for general-purpose amplifier and low speed switching applications
RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams
TO-220
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
TIP125
VCBO VCEO VEBO
IC ICM IB
Collector-Base Voltage Collector-Emitter Voltage Emitter-
TAITRON |
| PNP Epitaxial Silicon Darlington Transistor
TIP125, 126, 127
TIP125, 126, 127
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120, 121, 122
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP125 : TIP126 : TIP127
VCBO
-60 -80 -100
V V V
Collector-Emitter Voltage :
SemiHow |
| Related Part Number |
TIP35AF | TIP120F TIP32B | TIP30 TIP41G | TIP32G |
| DataSheet.es | 2020 | Contacto |