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| TC59YM916BKG40B Description |
| 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signal
Toshiba America Electronic |
| Related Part Number |
TC55465AJ-20 | TC5518CF-20 TC55329AP-20 | TC518128BPL-70 TC55257CPI-10 | TC554161TRL-10L |
| DataSheet.es | 2020 | Contacto |