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TC59YM916BKG40B PDF File ( Datasheet )




 



TC59YM916BKG40B Description
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signal

Toshiba America Electronic
Toshiba America Electronic




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