TC59SM816CFTI PDF File ( Datasheet )

TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second. These devices are controlled by commands setting. Each bank are kept active so that D