TC59SM804BFT PDF File ( Datasheet )

TC59SM816, 08, 04BFT, BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816BFT, BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT, BFTL is organized as 8,388,608 words × 4 banks × 8 bi

TC59SM816, 08, 04BFT, BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816BFT, BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT, BFTL is organized as 8,388,608 words × 4 banks × 8 bi