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| TC554161AFTI Description |
| STATIC RAM
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA, MH- (typ) and a minimum
Toshiba Semiconductor |
| STATIC RAM
TC554161AFTI-70,-85,-10,-70L,-85L,-10L
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT STATIC RAM
DESCRIPTION
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA, MH- (typ) and a minimum
Toshiba Semiconductor |
| Related Part Number |
TC518128CPL-70L | TC551001BFTL-70 TC55V2001FI-85 | TC5518CPL-15 TC518128BPL-80V | TC55B328J-12 |
| DataSheet.es | 2020 | Contacto |