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TC551001AFTL-10 PDF File ( Datasheet )

Toshiba
TC551001AFTL10L
128K X 8 Standard SRAM Standard SRAM, 128KX8, 100NS, Cmos, PDSO32
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TC551001AFTL-10 Description
SILICON GATE CMOS STATIC RAM

TOSHIBA SILICON GATE CMOS 1nC55100lAPL, PUFL, P.U![L, l\1]{L-70, 85, 10OL1) 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating Current of 5mNMH- (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low

Toshiba
Toshiba
SILICON GATE CMOS STATIC RAM

TOSHIBA SILICON GATE CMOS TC55100lAPL, AFL, AFIL, ATRL-70L, 85L, 10L(L1) 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mAlMH- (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low pow

Toshiba
Toshiba




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