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TC5117400BSJ-70 PDF File ( Datasheet )

Toshiba
TC5117400BSJ-70
Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24
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TC5117400BSJ-70 Description
DRAM

TOSHIBA TC5117400BSJ, BST-60, 70 4,194,304 WORD X 4 BIT DYNAMIC RAM PRELIMINARY Description The TC5117400BSJ, BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ, BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ, BST to be packaged in a 26, 24 pin plastic SOJ (300mil), and 26,

Toshiba Semiconductor
Toshiba Semiconductor




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