TC511001Z-10 PDF File ( Datasheet )

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511001 P, J, Z-S5, TC511001 P, J, Z-l0 TC511 001 P, J, Z-12 The TC5ll00lP, J, Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit. The TC5ll00lP, J, Z utilizes TOSHIBA's caos Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5ll00lP, J, Z to be p