TC2996D PDF File ( Datasheet )

TC2996D REV2_20070503 2.45 GH- 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES 12 W Typical Power at 2.45 GH- 11 dB Typical Linear Power Gain at 2.45 GH- High Linearity: IP3 = 50 dBm Typical High Power Added Efficiency: Nominal PAE of 40 % Suitable for High Reliability Application Wg = 30 mm 100 % DC and RF Tested PHOTO ENLARGEMENT Flange Ceramic Package DESCRIPTION The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input p