SISS27DN PDF File ( Datasheet )

P-Channel 30 V (D-S) MOSFET SiSS27DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) Max. 0.0056 at VGS = - 10 V - 30 0.0070 at VGS = - 6 V 0.0090 at VGS = - 4.5 V ID (A) - 50e - 50e - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S 3.3 mm 3.3 mm S 1 S 2 S 3 G 4 0.75 mm FEATURES TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.

SMD Type SISS27DN-T1-GE3 MOSFET 30V P-Channel MOSFET General Description Product Summary The SISS27DN uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. RoHS and Halogen-Free Compliant VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30V -50A < 6.2mΩ < 8.9mΩ 100% UIS Tested 100% Rg Tested PowerPAK 1212-8S Top View Bottom Pin 1 Top View 18 27 36 45 G A