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SISS10DN PDF File ( Datasheet )
Vishay
SISS10DN-T1-GE3
N-Channel 40 V 2.65 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8S
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| SISS10DN Description |
| N-Channel 40 V (D-S) MOSFET
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SiSS10DN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) ( ) (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 23 nC
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
1
4
3 S
2 S
S
G
Bottom View
Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES TrenchFET® Gen IV power MOSFET
Optimized Qg, Qgd, and Qgd, Qgs ratio reduces switching related power loss
1
 Vishay |
| Related Part Number |
SISS40DN | SIS902DN SiSS27ADN | SISS71DN SiSS27DN | SIS488DN |
| DataSheet.es | 2020 | Contacto |