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| SIHLIZ14G Description |
| Power MOSFET, Transistor
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 8.4 3.5 6.0 Single 60 0.20
FEATURES
Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
D
DESCRIPTION
Third genera
Vishay Siliconix |
| Related Part Number |
SiHH11N60E | SiHG21N60EF SiHJ8N60E | SIHG25N60EFL SIHG35N60E | SIHG61N65EF |
| DataSheet.es | 2020 | Contacto |