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SIA537EDJ PDF File ( Datasheet )

Vishay
SIA537EDJ-T1-GE3
Trans MOSFET N/P-CH 12V/20V 4.5A 6-Pin PowerPAK SC-70 T/R
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SIA537EDJ Description
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET

SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 RDS(on) ( ) MAX. 0.028 at VGS = 4.5 V 0.033 at VGS = 2.5 V 0.042 at VGS = 1.8 V 0.054 at VGS = -4.5 V P-Channel -20 0.070 at VGS = -2.5 V 0.104 at VGS = -1.8 V 0.165 at VGS = -1.5 V ID (A) 4.5 a 4.5 a 4.5 a -4.5 a -4.5 a -4.5 a -1.5 9.5 nC 6.2 nC Qg (TYP.) FEATURES TrenchFET® Power MOSFETs Typical ESD protection: N-channel 2400 V P-channel 2000 V 100 % Rg tes

Vishay
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