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SI5999EDU PDF File ( Datasheet )
Vishay
SI5999EDU-T1-GE3
Dual P-Channel 20 V 59 mOhm 20 nC 10.4 W SMT Mosfet - PowerPAK ChipFET
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| SI5999EDU Description |
| Dual P-Channel 20 V (D-S) MOSFET
Dual P-Channel 20 V (D-S) MOSFET
Si5999EDU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ( )
0.059 at VGS = - 4.5 V - 20
0.096 at VGS = - 2.5 V
ID (A) - 6a - 6a
Qg (Typ.) 6.9 nC
PowerPAK ChipFET Dual 1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
Typical ESD Performance 1500 V in HBM
Compliant to RoHS Directive 2002, 95, EC
 Vishay |
| Related Part Number |
Si5419DU | Si5323 SI5411-HB | SI5415-H Si5365 | SI5413-H |
| DataSheet.es | 2020 | Contacto |