DataSheet.es    

SI2315DS-T1 PDF File ( Datasheet )

Vishay
SI2315DS-T1-E3
MOSFET, Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC

PDF Datasheet
DistributorStock110100Link
Component Stockers USA76199.99Visit Site
Win Source1,815Visit Site
RC Electronics118,0540.040.040.03Visit Site
Anlinkda39,4180.0580.0520.041Visit Site
Run Hong Electronics4,8660.1011Visit Site
Chipsmall Limited60Visit Site
Powered by Octopart



 



SI2315DS-T1 Description
P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.055 @ VGS = - 4.5 V 0.075 @ VGS = - 2.5 V 0.118 @ VGS = - 1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2315DS-T1 Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode
Vishay Siliconix
Vishay Siliconix



Related Part Number

SI2302DS-HF  |  SI2321  

Si2307  |  SI2301  

SI2312  |  Si2307CDS  



DataSheet.es    |   2020   |  Contacto