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STS2336A PDF File ( Datasheet )

VBsemi
STS2336A-VB
20V, 6A, Rds(on), 24M¦¸@4.5V, 33M¦¸@2.5V, 8VGS(¡ÀV), 0.45~1VTH(V) , SOT23-3 N , --
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STS2336A Description
N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2336A Dec 26 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3A R DS (ON) S uper high dense cell design for low R DS (ON ). 60@ V G S = 4.5V 120@ V G S =2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C

ETC
ETC




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