|
| STPSC406 Description |
| Schottky Barrier 600 V power Schottky silicon carbide diode
STPSC406
600 V power Schottky silicon carbide diode
Features
- - -
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
K
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns
ST Microelectronics |
| Related Part Number |
STPSC6TH13TI | STP4407 STP9NM60N | STP3010 STP3NK50Z | STP9435 |
| DataSheet.es | 2020 | Contacto |