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STPSC406 PDF File ( Datasheet )

STMicroelectronics
STPSC406D
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon Carbide, TO-220AC
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STPSC406 Description
Schottky Barrier 600 V power Schottky silicon carbide diode

STPSC406 600 V power Schottky silicon carbide diode Features - - - No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns

ST Microelectronics
ST Microelectronics




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