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STPSC10H065 PDF File ( Datasheet )

STMicroelectronics
STPSC10H065G-TR
STPSC10H065 Series 650 V 10 A Power Schottky Silicon Carbide Diode - D2PAK

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STPSC10H065 Description
power Schottky silicon carbide diode

STPSC10H065 650 V power Schottky silicon carbide diode Features - No or negligible reverse recovery - Switching behavior independent of temperature - Dedicated to PFC applications - High forward surge capability Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at tur
STMicroelectronics
STMicroelectronics



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