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STP6NB80 PDF File ( Datasheet )

VBsemi
STP6NB80FP-VB
N¡ªchannel, 800V, 5A, Rds(on), 1300M¦¸@10V, 30VGS(¡ÀV), 3.5VTH(V) , TO220F
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STP6NB80 Description
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220, TO-220FP PowerMESH ™ MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 1.9 Ω < 1.9 Ω ID 5.7 A 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of

ST Microelectronics
ST Microelectronics
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220, TO-220FP PowerMESH ™ MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 1.9 Ω < 1.9 Ω ID 5.7 A 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of

ST Microelectronics
ST Microelectronics




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