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STP60NS04ZB PDF File ( Datasheet )

STMicroelectronics
STP60NS04ZB
N-channel Clamped 10MOHM -60A TO-220 Fully Protected Mesh Overlay™ Mosfet
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STP60NS04ZB Description
N-CHANNEL CLAMPED MOSFET

STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET TYPE STP60NS04ZB s s s s VDSS CLAMPED RDS(on) < 0.015 Ω ID 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE 1 3 2 DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the ex

ST Microelectronics
ST Microelectronics




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