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STP30N06FI PDF File ( Datasheet )

STMicroelectronics
STP30N06FI
Power Field-Effect Transistor, 19A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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STP30N06FI Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND REL

ST Microelectronics
ST Microelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND REL

STMicroelectronics
STMicroelectronics




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