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| STI50DE100 Description |
| Hybrid Emitter Switched Bipolar Transistor ESBT
STI50DE100
Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω
Preliminary Data
General features
VCS(ON) 1.3 V
-
IC 50 A
RCS(ON) 0.026
W
High voltage , high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kH- Ultra low Ciss Low dynamic VCS(ON)
1 2 3 4
- - - -
I4PAC-4L
Applications
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Internal schematic diagrams
Industrial converters Welding
Description
The STI50DE100 is manufactured in a hybrid structure, using de
ST Microelectronics |
| Related Part Number |
STIPN1M50-H | STI35N65M5 STI3470 | STI21N65M5 STI18NM60N | STI400N4F6 |
| DataSheet.es | 2020 | Contacto |