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STH10NC60FI PDF File ( Datasheet )

STMicroelectronics
STH10NC60FI
N-channel 600V - 0.6 Ohm - 10A - TO-247/ISOWATT218 Powermesh™ii Mosfet
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STH10NC60FI Description
N-CHANNEL Power MOS MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247, ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247 3 3 2 1 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the R

ST Microelectronics
ST Microelectronics




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