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STGW30N90D PDF File ( Datasheet )

STMicroelectronics
STGW30N90D
Trans IGBT Chip N-CH 900V 60A 3-Pin (3+Tab) TO-247

PDF Datasheet
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STGW30N90D Description
IGBT, Insulated Gate Bipolar Transistor

STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH™ IGBT Preliminary Data Features Type STGW30N90D - - - - - - VCES 900V VCE(sat) @25°C < 2.75V IC @100°C 30A Low on-losses Low on-voltage drop (Vcesat) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching application TO-247 Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with

ST Microelectronics
ST Microelectronics



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