DataSheet.es    

STD8NS25 PDF File ( Datasheet )

STMicroelectronics
STD8NS25T4
Power Field-Effect Transistor, 8A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
DistributorStock110100Link
Win Source20Visit Site
Powered by Octopart



 



STD8NS25 Description
N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY MOSFET

N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STD8NS25 s s s STD8NS25 VDSS 250 V RDS(on) < 0.45 Ω ID 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, ma

ST Microelectronics
ST Microelectronics




Related Part Number

STD5915  |  STD5N60DM2  

STD30L01  |  STD35L01HA  

STD36L01A  |  STD13005IS  



DataSheet.es    |   2020   |  Contacto